GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE

被引：89

作者：

HAKKI, BW ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.321380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：292 / 302

页数：11

共 22 条

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[7]

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[8] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028

[9] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[10] CATASTROPHIC FAILURE IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

HAKKI, BW ;

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3907-3912

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