A NEW ETCH FEATURE IN GERMANIUM-DOPED AND SILICON-DOPED LEC GALLIUM-ARSENIDE

被引：3

|

作者：

HOPE, DAO

COCKAYNE, B

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 67卷 / 02期

关键词：

D O I：

10.1016/0022-0248(84)90174-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：153 / 167

页数：15

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