WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：28

作者：

CALLEGARI, A ^{[1
]}

SPIERS, GD ^{[1
]}

MAGERLEIN, JH ^{[1
]}

GUTHRIE, HC ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2054 / 2058

页数：5

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