Electrical Properties of Thin Films of 1, 4-cis-Polybutadiene Doped with SiC

In this paper the results of DC investigation of 1,4-cis-polybutadiene thin films doped with 5% weight of silicon carbonate (SiC) of nanocrystalline form with the size of grains being about 20 nm are presented. The aim of the study was to get knowledge about the electrical properties and DC conductivity mechanisms depending on film thickness, temperature and electric field magnitude. The investigated films thickness ranged from 1 to 12 mu m. The investigations were carried out for both undoped and doped with nanocrystalline SiC polymers. The current flow through the material bulk changed from 10(-12) to 10(-4)A with applied electric fields of 0 to 3.10(7)V/m and temperature of the film varying from 15 to 325 K. It was observed that the magnitude of the current flow through the investigated material bulk is governed by a phase state of the polymer and the presence of SiC in the bulk. The charge transport through the material bulk is controlled by the Poole-Frenkel phenomenon as well as by hopping. The determined activation energies were between kT and 0.36 eV.