RECOVERY OF LOW-TEMPERATURE ELECTRON TRAPPING IN ALGAAS/INGAAS PM-HEMTS DUE TO IMPACT-IONIZATION

被引：8

作者：

MENEGHESSO, G ^{[1
]}

DEBORTOLI, E ^{[1
]}

PACCAGNELLA, A ^{[1
]}

ZANONI, E ^{[1
]}

CANALI, C ^{[1
]}

机构：

[1] UNIV MODENA,DIPARTIMENTO SCI INGN,I-41100 MODENA,ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 07期

关键词：

D O I：

10.1109/55.388726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The de behavior of AlGaAs/InGaAs PM-HEMT's has been investigated at a low temperature. Two different failure modes have been identified according to bias conditions, consisting of: a) a dramatic collapse in the drain current I-D, and b) a considerable shift in the threshold voltage V-T. I-D decrease is due to trapping of electrons in deep levels in the gate-drain region, while trapping under the gate is responsible for V-T shift. At high V-DS a recovery of the de devices characteristics is observed, due to impact-ionization phenomena.

引用

页码：336 / 338

页数：3

共 10 条

[1] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J].

DRUMMOND, TJ ;

FISCHER, RJ ;

KOPP, WF ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1806-1811

[2] ULTRA-LOW-NOISE CRYOGENIC HIGH-ELECTRON-MOBILITY TRANSISTORS [J].

DUH, KHG ;

POSPIESZALSKI, MW ;

KOPP, WF ;

HO, P ;

JABRA, AA ;

CHAO, PC ;

SMITH, PM ;

LESTER, LF ;

BALLINGALL, JM ;

WEINREB, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) :249-256

[3] INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K [J].

FISCHER, R ;

DRUMMOND, TJ ;

KOPP, W ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

ELECTRONICS LETTERS, 1983, 19 (19) :789-791

[4] BIAS-DEPENDENT COLLAPSE AND ITS RECOVERY PHENOMENON IN ALGAAS/GAAS 2DEGFETS AT LOW-TEMPERATURES [J].

HORI, Y ;

KUZUHARA, M ;

SAMOTO, N ;

ITOH, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) :2720-2725

[5] NOISE PERFORMANCE AT CRYOGENIC TEMPERATURES OF ALGAAS INGAAS HEMTS WITH 0.15-MU-M T-SHAPED WSIX GATES [J].

JOSHIN, K ;

MIMINO, Y ;

OHMURA, S ;

HIRACHI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :515-519

[6] ON THE LOW-TEMPERATURE DEGRADATION OF (ALGA)AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KASTALSKY, A ;

KIEHL, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :414-423

[7] TEMPERATURE-DEPENDENCE OF HIGH-FREQUENCY PERFORMANCE OF ALGAAS/INGAAS PSEUDOMORPHIC HEMTS [J].

MIZUTANI, T ;

MAEZAWA, K .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) :8-10

[8] METASTABLE IMPACT IONIZATION OF TRAPS MODEL FOR LOCK-ON IN GAAS PHOTOCONDUCTIVE SWITCHES [J].

PARTAIN, L ;

DAY, D ;

POWELL, R .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :335-340

[9] NOISE IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HEMTS FROM 10-HZ TO 18-GHZ [J].

PLANA, R ;

ESCOTTE, L ;

LLOPIS, O ;

AMINE, H ;

PARRA, T ;

GAYRAL, M ;

GRAFFEUIL, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :852-858

[10] IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS/INGAAS HEMTS [J].

TEDESCO, C ;

ZANONI, E ;

CANALI, C ;

BIGLIARDI, S ;

MANFREDI, M ;

STREIT, DC ;

ANDERSON, WT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (07) :1211-1214

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