Spin-dependent dynamical processes of excited states in semiconductors

Semiconductors with donors and acceptors can be brought into excited states by illumination with above-band-gap light. In a magnetic field, the recombination of donor electrons and acceptor holes is spin-dependent and can be used to detect electron paramagnetic resonance electrically (EDEPR). Hyperfine and fine structure interactions can be resolved. The recombination dynamics are influenced by external parameters such as microwave power, light intensity, temperature as well as by the defect concentration, The mechanism for EDEPR is found to be analogous to that of luminescence-detected EPR via donor-acceptor recombination.