DYNAMIC DEFECT REACTIONS INDUCED BY MULTIPHONON NONRADIATIVE RECOMBINATION OF INJECTED CARRIERS AT DEEP LEVELS IN SEMICONDUCTORS

被引：87
作者：
SUMI, H
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.29.4616
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：4616 / 4630
页数：15
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