Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

被引：3
作者：
Chen, Li [1 ,2 ,3 ]
Chen, Xinliang [1 ,2 ,3 ]
Zhou, Zhongxin [1 ,2 ,3 ]
Guo, Sheng [1 ,2 ,3 ]
Zhao, Ying [1 ,2 ,3 ]
Zhang, Xiaodan [1 ,2 ,3 ]
机构：
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
[2] Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Tianjin 300071, Peoples R China
[3] Nankai Univ, Key Lab Optoelect Informat Sci & Technol, Minist Educ, Tianjin 300071, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 03期
关键词：
AZO films; ALD; Zn : Al cycle ratio; optical and electrical properties;
D O I：
10.1088/1674-4926/39/3/033004
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 degrees C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 x 10(-3) Omega center dot cm and high optical transmittance deposited at 150 degrees C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application.
引用
收藏
页数：6
相关论文
共 34 条
[1]   Influence of growth temperature on the electrical and structural characteristics of conductive Al-doped ZnO thin films grown by atomic layer deposition [J].
Ahn, Cheol Hyoun ;
Lee, Sang Yeol ;
Cho, Hyung Koun .
THIN SOLID FILMS, 2013, 545 :106-110
[2]   Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films [J].
Banerjee, Parag ;
Lee, Won-Jae ;
Bae, Ki-Ryeol ;
Lee, Sang Bok ;
Rubloff, Gary W. .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)
[3]   Polycrystalline CdTe thin films for photovoltaic applications [J].
Bosio, Alessio ;
Romeo, Nicola ;
Mazzamuto, Samantha ;
Canevari, Vittorio .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2006, 52 (04) :247-279
[4]   Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature [J].
Cho, Doo-Hee ;
Yang, Shinhyuk ;
Byun, Chunwon ;
Shin, Jaeheon ;
Ryu, Min Ki ;
Park, Sang-Hee Ko ;
Hwang, Chi-Sun ;
Chung, Sung Mook ;
Cheong, Woo-Seok ;
Yoon, Sung Min ;
Chu, Hye-Yong .
APPLIED PHYSICS LETTERS, 2008, 93 (14)
[5]   Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity [J].
Dasgupta, Neil P. ;
Neubert, Sebastian ;
Lee, Wonyoung ;
Trejo, Orlando ;
Lee, Jung-Rok ;
Prinz, Fritz B. .
CHEMISTRY OF MATERIALS, 2010, 22 (16) :4769-4775
[6]   Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition [J].
Dhakal, Tara ;
Vanhart, Daniel ;
Christian, Rachel ;
Nandur, Abhishek ;
Sharma, Anju ;
Westgate, Charles R. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (02)
[7]   Thickness dependence of sensor response for CO gas sensing by tin oxide films grown using atomic layer deposition [J].
Du, X. ;
George, S. M. .
SENSORS AND ACTUATORS B-CHEMICAL, 2008, 135 (01) :152-160
[8]   Transparent conducting zinc oxide thin films doped with aluminum and molybdenum [J].
Duenow, Joel N. ;
Gessert, Timothy A. ;
Wood, David M. ;
Barnes, Teresa M. ;
Young, Matthew ;
To, Bobby ;
Coutts, Timothy J. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (04) :955-960
[9]   Growth of ZnO/Al2O3 alloy films using atomic layer deposition techniques [J].
Elam, JW ;
George, SM .
CHEMISTRY OF MATERIALS, 2003, 15 (04) :1020-1028
[10]  
Ellmer K, 2008, SPRINGER SER MATER S, V104, P1, DOI 10.1007/978-3-540-73612-7
1234