SIMULATION OF HEATING IN POWERFUL ELECTRON LITHOGRAPHY

被引:4
作者
SVINTSOV, AA
ZAITSEV, SI
机构
[1] Inst of Microelectronics Technology, Moscow district, Russia
关键词
D O I
10.1016/0167-9317(94)00086-A
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Temperature up to 10(3) K can be induced by variable shape e-beam machine. We developed a new fast method of simulation of heating effect in power full e-beam lithography. The method suggested allows one direct calculations of additional dose due to heating but not only temperature distribution as in earlier papers. The method can be applied to real exposure of 10cm wafer to predict and estimate heating effect for reasonable time. As the first step of heating effect correction we suggest to compensate only internal heating effect.
引用
收藏
页码:187 / 190
页数:4
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