ATOMIC CONFIGURATION OF HYDROGENATED AND CLEAN SI(110) SURFACES

被引：81

作者：

AMPO, H ^{[1
]}

MIURA, S ^{[1
]}

KATO, K ^{[1
]}

OHKAWA, Y ^{[1
]}

TAMURA, A ^{[1
]}

机构：

[1] WASEDA UNIV,DEPT APPL PHYS,TOKYO 160,JAPAN

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2329 / 2335

页数：7

共 23 条

[1] LEED FROM SURFACE STEPS ON UO2 SINGLE CRYSTALS [J].

ELLIS, WP ;

SCHWOEBEL, RL .

SURFACE SCIENCE, 1968, 11 (01) :82-+

[2] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J].

HAGSTRUM, HD ;

BECKER, GE .

PHYSICAL REVIEW B, 1973, 8 (04) :1580-1591

[3]

Henzler M., 1977, Electron spectroscopy for surface analysis, P117

[4] HYDROGEN ADSORPTION AND SURFACE-STRUCTURES OF SILICON [J].

IBACH, H ;

ROWE, JE .

SURFACE SCIENCE, 1974, 43 (02) :481-492

[5] FORMATION OF SURFACE SUPERSTRUCTURES BY HEAT-TREATMENTS ON NI-CONTAMINATED SURFACE OF SI(110) [J].

ICHINOKAWA, T ;

AMPO, H ;

MIURA, S ;

TAMURA, A .

PHYSICAL REVIEW B, 1985, 31 (08) :5183-5186

[6] SHIFT OF SURFACE-PLASMON ENERGY ACROSS THE PHASE-TRANSITIONS OF SILICON RECONSTRUCTED STRUCTURES FOR SEVERAL CRYSTAL PLANES [J].

ICHINOKAWA, T ;

YAMAGAMI, N ;

AMPO, H ;

TAMURA, A .

PHYSICAL REVIEW B, 1983, 28 (10) :6151-6153

[7] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION [J].

JONA, F .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) :375-&

[8] EXPERIMENTAL-EVIDENCE FOR ASYMMETRIC DIMERS ON CLEAN SI(001) SURFACES [J].

KOKE, P ;

MONCH, W .

SOLID STATE COMMUNICATIONS, 1980, 36 (12) :1007-1009

[9] STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE [J].

LEVINE, JD .

SURFACE SCIENCE, 1973, 34 (01) :90-107

[10] STRUCTURE OF SI(111)-7X7 [J].

MCRAE, EG .

SURFACE SCIENCE, 1983, 124 (01) :106-128

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