FORMATION OF DEVICE QUALITY SI SIO2 INTERFACES AT LOW SUBSTRATE TEMPERATURES BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2

被引：43
作者：
LUCOVSKY, G [1 ]
KIM, SS [1 ]
FITCH, JT [1 ]
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.584973
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：822 / 831
页数：10
相关论文
共 20 条
[1]  
ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135
[2]   LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
BATEY, J ;
TIERNEY, E .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145
[3]   PLASMA-ENHANCED CVD OF HIGH-QUALITY INSULATING FILMS [J].
BATEY, J ;
TIERNEY, E ;
STASIAK, J ;
NGUYEN, TN .
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) :1-15
[4]  
DIMARIA DJ, 1980, J APPL PHYS, V51, P5801
[5]   EFFECTS OF THERMAL HISTORY ON STRESS-RELATED PROPERTIES OF VERY THIN-FILMS OF THERMALLY GROWN SILICON DIOXIDE [J].
FITCH, JT ;
LUCOVSKY, G ;
KOBEDA, E ;
IRENE, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :153-162
[6]   THERMAL STABILIZATION OF DEVICE QUALITY FILMS DEPOSITED AT LOW-TEMPERATURES [J].
FITCH, JT ;
KIM, SS ;
LUCOVSKY, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1871-1877
[7]  
FITCH JT, 1988, PHYSICS CHEM SIO2 SI, P139
[8]   LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J].
FOUNTAIN, GG ;
RUDDER, RA ;
HATTANGADY, SV ;
MARKUNAS, RJ ;
LINDORME, PS .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4744-4746
[9]   EVIDENCE FOR THE OCCURRENCE OF SUBCUTANEOUS OXIDATION DURING LOW-TEMPERATURE REMOTE PLASMA ENHANCED DEPOSITION OF SILICON DIOXIDE FILMS [J].
FOUNTAIN, GG ;
HATTANGADY, SV ;
RUDDER, RA ;
MARKUNAS, RJ ;
LUCOVSKY, G ;
KIM, SS ;
TSU, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :576-580
[10]   LOW HYDROGEN CONTENT SILICON-NITRIDE DEPOSITED AT LOW-TEMPERATURE BY NOVEL REMOTE PLASMA TECHNIQUE [J].
HATTANGADY, SV ;
FOUNTAIN, GG ;
RUDDER, RA ;
MARKUNAS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :570-575
12