ZONE-REFINING OF ANTIMONY TRISULFIDE

[1] ALEKSEJUNAS B, 1967, LIET FIZ RINKINYS, V7, P475

[2] ]purification of sulfur [J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1942, 34 : 1043 - 1048

[3] PREPARATION OF HIGH-RESISTIVITY ANTIMONY SELENIDE BY ZONE-REFINING [J]. MATERIALS RESEARCH BULLETIN, 1973, 8 (05) : 481 - 487

[4] BRODOVII VA, 1961, UKR FIZ ZH, V6, P664

[5] STUDIES ON SINTERED PHOTOCONDUCTIVE LAYERS OF ANTIMONY TRISULPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (11) : 1641 - +

[6] Cope D., 1959, [No title captured], Patent No. [US Patent, 2875359]

[7] SOLUTION OF METALS IN THEIR MOLTEN SALTS - SOME MANGANESE, CHROMIUM, URANIUM AND ANTIMONY SYSTEMS [J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (10): : 1287 - 1291

[8] THE MEASUREMENT OF THE ENERGY GAP OF SEMICONDUCTORS FROM THEIR DIFFUSE REFLECTION SPECTRA [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 70 - 75

[9] FORGUE SV, 1951, RCA REV, V12, P335

[10] GAUMANN A, 1966, CHIMIA, V20, P82

[1] ALEKSEJUNAS B, 1967, LIET FIZ RINKINYS, V7, P475

[2] ]purification of sulfur [J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1942, 34 : 1043 - 1048

[3] PREPARATION OF HIGH-RESISTIVITY ANTIMONY SELENIDE BY ZONE-REFINING [J]. MATERIALS RESEARCH BULLETIN, 1973, 8 (05) : 481 - 487

[4] BRODOVII VA, 1961, UKR FIZ ZH, V6, P664

[5] STUDIES ON SINTERED PHOTOCONDUCTIVE LAYERS OF ANTIMONY TRISULPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (11) : 1641 - +

[6] Cope D., 1959, [No title captured], Patent No. [US Patent, 2875359]

[7] SOLUTION OF METALS IN THEIR MOLTEN SALTS - SOME MANGANESE, CHROMIUM, URANIUM AND ANTIMONY SYSTEMS [J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (10): : 1287 - 1291

[8] THE MEASUREMENT OF THE ENERGY GAP OF SEMICONDUCTORS FROM THEIR DIFFUSE REFLECTION SPECTRA [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 70 - 75

[9] FORGUE SV, 1951, RCA REV, V12, P335

[10] GAUMANN A, 1966, CHIMIA, V20, P82