PROPERTIES OF ZINC-OXIDE FILMS PREPARED BY THE OXIDATION OF DIETHYL ZINC

被引:232
作者
ROTH, AP
WILLIAMS, DF
机构
关键词
D O I
10.1063/1.328618
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6685 / 6692
页数:8
相关论文
共 28 条
[1]   ORGANOMETALLIC COMPOUNDS .1. THE AUTOXIDATION OF DIALKYLZINCS [J].
ABRAHAM, MH .
JOURNAL OF THE CHEMICAL SOCIETY, 1960, (OCT) :4130-4135
[2]   GROWTH OF SILICA AND PHOSPHOSILICATE FILMS [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :990-994
[3]   PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :941-944
[4]  
BAMFORD CH, 1960, J CHEM SOC, P688
[5]  
BARNES JO, 1980, J ELECTROCHEM SOC, V7, P1636
[6]   NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].
CROWELL, CR ;
RIDEOUT, VL .
SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&
[7]   EPITAXIAL ZNO ON SAPPHIRE [J].
GALLI, G ;
COKER, JE .
APPLIED PHYSICS LETTERS, 1970, 16 (11) :439-&
[8]   HIGHLY ORIENTED ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC [J].
GHANDHI, SK ;
FIELD, RJ ;
SHEALY, JR .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :449-451
[9]   INFLUENCE OF DEFECTS ON THE ELECTRONIC-STRUCTURE OF ZINC-OXIDE SURFACES [J].
GOPEL, W ;
LAMPE, U .
PHYSICAL REVIEW B, 1980, 22 (12) :6447-6462
[10]  
GROTEWOLD J, 1969, J CHEM SOC, P476