THERMOPHYSICAL PROPERTIES DATA ON MOLTEN SEMICONDUCTORS

被引：60

作者：

NAKAMURA, S

HIBIYA, T

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Ibaraki, 305, 34 Miyukigaoka, Tsukuba

来源：

INTERNATIONAL JOURNAL OF THERMOPHYSICS | 1992年 / 13卷 / 06期

关键词：

DENSITY; GAAS; GASB; GE; HIGH TEMPERATURE; INP; INSB; MOLTEN STATE; SEMICONDUCTORS; SI; SURFACE TENSION; THERMAL CONDUCTIVITY; VISCOSITY;

D O I：

10.1007/BF01141216

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.

引用

页码：1061 / 1084

页数：24

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