THE FABRICATION AND CHARACTERIZATION OF ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH A SILICON DIOXIDE GATE

被引：21

作者：

CHEN, SC

SU, YK

TZENG, JS

机构：

[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1986年 / 19卷 / 10期

关键词：

D O I：

10.1088/0022-3727/19/10/020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1951 / 1956

页数：6

共 13 条

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