THE EVOLUTION OF SI/SIO2 INTERFACE ROUGHNESS

被引：0
|
作者：
CARIM, AH [1 ]
SINCLAIR, R [1 ]
机构：
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C101 / C101
页数：1
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