A GENERAL-MODEL FOR INTERFACE-TRAP CHARGE-PUMPING EFFECTS IN MOS DEVICES

被引：34
作者：
CILINGIROGLU, U [1 ]
机构：
[1] ISTANBUL UNIV,FAC ELECT & ELECTR ENGN,DEPT ELECTR & TELECOMMUN,ISTANBUL,TURKEY
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 11期
关键词：
D O I：
10.1016/0038-1101(85)90194-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1127 / 1141
页数：15
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