DRASTIC CHANGES IN THE ELECTRICAL-RESISTANCE OF GOLD-DOPED SILICON PRODUCED BY A HYDROGEN PLASMA

被引：37
作者：
MOGROCAMPERO, A
LOVE, RP
SCHUBERT, R
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
10.1149/1.2114270
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：2006 / 2009
页数：4
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共 19 条
[1]   PROPERTIES OF GOLD IN SILICON [J].
BULLIS, WM .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&
[2]   THE RELATION BETWEEN HYDROGEN DESORPTION AND THE SURFACE CONDITIONS OF HIGH-PURITY ALUMINUM [J].
CSANADY, A ;
PAPP, K ;
PASZTOR, E .
MATERIALS SCIENCE AND ENGINEERING, 1981, 48 (01) :35-39
[3]   SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J].
FRIESER, RG ;
MONTILLO, FJ ;
ZINGERMAN, NB ;
CHU, WK ;
MADER, SR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) :2237-2241
[4]   BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J].
HANSEN, WL ;
PEARTON, SJ ;
HALLER, EE .
APPLIED PHYSICS LETTERS, 1984, 44 (06) :606-608
[5]  
HAUFFE K, 1970, BERICH BUNSEN GESELL, V74, P537
[6]   DIFFUSION OF GOLD IN SILICON [J].
HILL, M ;
LIETZ, M ;
SITTIG, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1579-1587
[7]  
KAHN JM, 1984, B AM PHYS SOC, V29, P208
[8]   NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].
PANKOVE, JI ;
CARLSON, DE ;
BERKEYHEISER, JE ;
WANCE, RO .
PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225
[9]  
Papp K., 1982, P INT C DIFFUSION ME, P450
[10]   HYDROGENATION OF GOLD-RELATED LEVELS IN SILICON BY ELECTROLYTIC DOPING [J].
PEARTON, SJ ;
HANSEN, WL ;
HALLER, EE ;
KAHN, JM .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1221-1223
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