GAAS GROWTH USING AN MBE SYSTEM CONNECTED WITH A 100 KV UHV MASKLESS ION IMPLANTER

被引：33
作者：
TAKAMORI, A
MIYAUCHI, E
ARIMOTO, H
BAMBA, Y
HASHIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L599
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L599 / L601
页数：3
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