INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE

被引：170
作者：
HILL, DE
机构：
来源：
PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 133卷 / 3A期
关键词：
D O I：
10.1103/PhysRev.133.A866
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：A866 / &
相关论文
共 21 条
[1]  
AIGRAIN P, 1955, CR HEBD ACAD SCI, V241, P859
[2]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[3]  
BURSTEIN E, 1954, P PHYS SOC LONDON, VB 67, P775
[4]   ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING [J].
CARDONA, M .
PHYSICAL REVIEW, 1961, 121 (03) :752-&
[5]   INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE [J].
GOBELI, GW ;
FAN, HY .
PHYSICAL REVIEW, 1960, 119 (02) :613-620
[6]   COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].
HALL, RN ;
CARLSON, RO ;
SOLTYS, TJ ;
FENNER, GE ;
KINGSLEY, JD .
PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&
[7]   INFRARED ABSORPTION OF INDIUM ANTIMONIDE [J].
KAISER, W ;
FAN, HY .
PHYSICAL REVIEW, 1955, 98 (04) :966-968
[8]  
KEYES RJ, 1962, P IRE, V50, P1822
[9]   ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS [J].
KUDMAN, I ;
SEIDEL, T .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) :771-&
[10]   STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].
NATHAN, MI ;
DUMKE, WP ;
BURNS, G ;
DILL, FH ;
LASHER, G .
APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64
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