TRANSIT-TIME DEVICE DESIGN USING INSTABILITY CRITERIA

被引：0

作者：

VAYA, PR ^{[1
]}

DATTATREYAN, C ^{[1
]}

机构：

[1] INDIAN INST TECHNOL, DEPT ELECT ENGN, MADRAS 600036, INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1982年 / 69卷 / 02期

关键词：

D O I：

10.1002/pssa.2210690251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K167 / K171

页数：5

共 9 条

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GUERET, P
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (05) : 256 - +
[5] HADDAD GL, 1975, EPL752005030 MEM
[6] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I.
MISAWA, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 137 - +
[7] EFFECTS OF DOPING PROFILE ON PERFORMANCE OF BARITT DEVICES
NGUYENBA, H
HADDAD, GI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1154 - 1163
[8] PERLMAN BS, 1973, RCA REV, V34, P457
[9] STEELE MC, 1969, WAVE INTERACTION SOL