TRANSIT-TIME DEVICE DESIGN USING INSTABILITY CRITERIA

被引：0
作者：
VAYA, PR [1 ]
DATTATREYAN, C [1 ]
机构：
[1] INDIAN INST TECHNOL, DEPT ELECT ENGN, MADRAS 600036, INDIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1982年 / 69卷 / 02期
关键词：
D O I：
10.1002/pssa.2210690251
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K167 / K171
页数：5
相关论文
共 9 条
[1]  
BRIGGS R, 1964, ELECTRON STREAM INTE
[2]  
Coleman D. J. Jr., 1971, Bell System Technical Journal, V50, P1695
[3]  
FREYER, 1980, P IEEE, V127, P78
[4]   CONVECTIVE AND ABSOLUTE INSTABILITIES IN SEMICONDUCTORS EXHIBITING NEGATIVE DIFFERENTIAL MOBILITY [J].
GUERET, P .
PHYSICAL REVIEW LETTERS, 1971, 27 (05) :256-+
[5]  
HADDAD GL, 1975, EPL752005030 MEM
[6]   NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].
MISAWA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+
[7]   EFFECTS OF DOPING PROFILE ON PERFORMANCE OF BARITT DEVICES [J].
NGUYENBA, H ;
HADDAD, GI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1154-1163
[8]  
PERLMAN BS, 1973, RCA REV, V34, P457
[9]  
STEELE MC, 1969, WAVE INTERACTION SOL
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