CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF COBALT AND ALPHA-(6H) SILICON CARBIDE-(0001)

被引：42

作者：

PORTER, LM ^{[1
]}

DAVIS, RF ^{[1
]}

BOW, JS ^{[1
]}

KIM, MJ ^{[1
]}

CARPENTER, RW ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 01期

关键词：

D O I：

10.1557/JMR.1995.0026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films (4 - 1000 angstrom) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 x 10(-8) A/cm2 at - 10 V, respectively. During annealing at 1000-degrees-C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

引用

页码：26 / 33

页数：8

共 14 条

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Briggs D, 1990, AUGER XRAY PHOTOELEC, V1

[2]

CHASE MW, 1985, JANEF THERMOCHEMICAL, V14

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