NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS

被引：15

作者：

LIU, DC ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30039,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel technique for semiconductor quantum dots fabrication is demonstrated. Using the technique of thermal etching or thermal evaporation during molecular beam epitaxial growth with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run.

引用

收藏

页码：3503 / 3505

页数：3

相关论文

共 10 条

[1] LOW-DIMENSIONAL SYSTEMS - QUANTUM WIRES AND QUANTUM BOXES BY MBE [J].

GOSSARD, AC ;

ENGLISH, JH ;

PETROFF, PM ;

CIBERT, J ;

DOLAN, GJ ;

PEARTON, SJ .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :101-105

[2] OBSERVATION OF QUANTUM DOT LEVELS PRODUCED BY STRAIN MODULATION OF GAAS-ALGAAS QUANTUM-WELLS [J].

KASH, K ;

MAHONEY, DD ;

VANDERGAAG, BP ;

GOZDZ, AS ;

HARBISON, JP ;

FLOREZ, LT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :2030-2033

[3] ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS [J].

LIU, DC ;

LEE, CP ;

TSAI, CM ;

LEI, TF ;

TSANG, JS ;

CHIANG, WH ;

TU, YK .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8027-8034

[4]

LIU DC, 1992, J APPL PHYS, V71, P1525

[5] THRESHOLD CURRENT-DENSITY OF GAINASP-INP QUANTUM-BOX LASERS [J].

MIYAMOTO, Y ;

MIYAKE, Y ;

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (09) :2001-2006

[6] INTERFACE STRUCTURE AND OPTICAL-PROPERTIES OF QUANTUM-WELLS AND QUANTUM BOXES [J].

PETROFF, PM ;

CIBERT, J ;

GOSSARD, AC ;

DOLAN, GJ ;

TU, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1204-1208

[7] PHOTOLUMINESCENCE STUDY OF STRAIN-INDUCED QUANTUM-WELL DOTS BY WET-ETCHING TECHNIQUE [J].

TAN, IH ;

MIRIN, R ;

JAYARAMAN, V ;

SHI, S ;

HU, E ;

BOWERS, J .

APPLIED PHYSICS LETTERS, 1992, 61 (03) :300-302

[8] LOW-TEMPERATURE PHOTOLUMINESCENCE FROM INGAAS/INP QUANTUM WIRES AND BOXES [J].

TEMKIN, H ;

DOLAN, GJ ;

PANISH, MB ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1987, 50 (07) :413-415

[9] QUANTUM BOX FABRICATION TOLERANCE AND SIZE LIMITS IN SEMICONDUCTORS AND THEIR EFFECT ON OPTICAL GAIN [J].

VAHALA, KJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (03) :523-530

[10]

BASED ARGUMENTS SQUA