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LASER RECRYSTALLIZATION AND HYDROGEN PLASMA ANNEALING OF ION-IMPLANTED POLYSILICON
被引:0
作者
:
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
LIN, CL
论文数:
0
引用数:
0
h-index:
0
LIN, CL
SHEN, ZY
论文数:
0
引用数:
0
h-index:
0
SHEN, ZY
TSOU, SC
论文数:
0
引用数:
0
h-index:
0
TSOU, SC
机构
:
来源
:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
|
1985年
/ 7-8卷
/ MAR期
关键词
:
D O I
:
10.1016/0168-583X(85)90579-8
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:348 / 351
页数:4
相关论文
共 8 条
[1]
EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
ORTIZCONDE, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(08)
:933
-940
[2]
3-DIMENSIONAL CMOS ICS FABRICATED BY USING BEAM RECRYSTALLIZATION
[J].
KAWAMURA, S
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, S
;
SASAKI, N
论文数:
0
引用数:
0
h-index:
0
SASAKI, N
;
IWAI, T
论文数:
0
引用数:
0
h-index:
0
IWAI, T
;
NAKANO, M
论文数:
0
引用数:
0
h-index:
0
NAKANO, M
;
TAKAGI, M
论文数:
0
引用数:
0
h-index:
0
TAKAGI, M
.
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(10)
:366
-368
[3]
A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS
[J].
LU, NC
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, NC
;
GERZBERG, L
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
GERZBERG, L
;
LU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, CY
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
MEINDL, JD
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(02)
:137
-149
[4]
MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS
[J].
LU, NCC
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, NCC
;
GERZBERG, L
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
GERZBERG, L
;
LU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, CY
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
MEINDL, JD
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(07)
:818
-830
[5]
A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY
[J].
MANDURAH, MM
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
MANDURAH, MM
;
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
SARASWAT, KC
;
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
KAMINS, TI
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(10)
:1163
-1171
[6]
LASER-RECRYSTALLIZED POLYCRYSTALLINE SILICON RESISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS
[J].
SCHABER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
SCHABER, H
;
CUTTER, D
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
CUTTER, D
;
BINDER, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
BINDER, J
;
OBERMEIER, E
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
OBERMEIER, E
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(08)
:4633
-4640
[7]
ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
[J].
SETO, JYW
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
SETO, JYW
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
:5247
-5254
[8]
TSOU SC, 1983, ACTA ELECTRONICA SIN, V11, P1
←
1
→
共 8 条
[1]
EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
ORTIZCONDE, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(08)
:933
-940
[2]
3-DIMENSIONAL CMOS ICS FABRICATED BY USING BEAM RECRYSTALLIZATION
[J].
KAWAMURA, S
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, S
;
SASAKI, N
论文数:
0
引用数:
0
h-index:
0
SASAKI, N
;
IWAI, T
论文数:
0
引用数:
0
h-index:
0
IWAI, T
;
NAKANO, M
论文数:
0
引用数:
0
h-index:
0
NAKANO, M
;
TAKAGI, M
论文数:
0
引用数:
0
h-index:
0
TAKAGI, M
.
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(10)
:366
-368
[3]
A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS
[J].
LU, NC
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, NC
;
GERZBERG, L
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
GERZBERG, L
;
LU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, CY
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
MEINDL, JD
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(02)
:137
-149
[4]
MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS
[J].
LU, NCC
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, NCC
;
GERZBERG, L
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
GERZBERG, L
;
LU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
LU, CY
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
MEINDL, JD
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(07)
:818
-830
[5]
A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY
[J].
MANDURAH, MM
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
MANDURAH, MM
;
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
SARASWAT, KC
;
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
KAMINS, TI
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(10)
:1163
-1171
[6]
LASER-RECRYSTALLIZED POLYCRYSTALLINE SILICON RESISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS
[J].
SCHABER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
SCHABER, H
;
CUTTER, D
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
CUTTER, D
;
BINDER, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
BINDER, J
;
OBERMEIER, E
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER
OBERMEIER, E
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(08)
:4633
-4640
[7]
ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
[J].
SETO, JYW
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
SETO, JYW
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
:5247
-5254
[8]
TSOU SC, 1983, ACTA ELECTRONICA SIN, V11, P1
←
1
→