PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TIN FROM TICL4/N2/H2 GAS-MIXTURES

被引：21

作者：

IANNO, NJ

AHMED, AU

ENGLEBERT, DE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1149/1.2096602

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：276 / 280

页数：5

共 18 条

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[3] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS [J].

CHU, JK ;

TANG, CC ;

HESS, DW .

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[4]

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[5]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[6] TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J].

GARCEAU, WJ ;

FOURNIER, PR ;

HERB, GK .

THIN SOLID FILMS, 1979, 60 (02) :237-247

[7]

GLEASON EF, 1986, B AM PHYS SOC, V31, P424

[8] DIFFUSION BARRIERS IN THIN-FILMS [J].

NICOLET, MA .

THIN SOLID FILMS, 1978, 52 (03) :415-443

[9]

ROSSLER RS, 1984, J VAC SCI TECHNOL B, V24, P733

[10]

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