DEPTH PROFILE ANALYSIS OF 2 ELEMENT MIXTURES BY RUTHERFORD BACKSCATTERING SPECTROMETRY

被引:3
作者
ZHANG, QC
MCMILLAN, P
KELLY, JC
机构
[1] School of Physics, The University of New South Wales., Kensington
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 114卷 / 1-2期
关键词
backscattering; deconvolution; depth profile; energy resolution; ion implantation; RBS spectrum;
D O I
10.1080/10420159008213088
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
A versatile method for calculating the depth profiles of two element mixtures using backscattering yield ratio has been derived. Previously published approximate formulas are included as special cases. There are limiting cases where the approximate formulas can be used to calculate depth profiles directly for sets of targets, Si/SiO2, Si/Si3 N4., Al/Al2 O3, and Al/A1N. The simple deconvolution of RBS spectra by the straightforward method has been discussed. It is easy to be performed with a PC computer. For Gaussian distribution a broadened profile is recovered after deconvolution by this method if the ratio of broadened profile width Γh(FWHM) to broadening function width Γh (FWHM), Γh/Γb> 1.5. For example the peak height increases 35% and width reduces 25% for Γh/Γb =5. © 1990, Taylor & Francis Group, LLC. All rights reserved.
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页码:115 / 131
页数:17
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