Custom monolithic IC design for high energy physics

Five custom low-noise monolithic front-end ICs for high energy physics experiments have been designed using microwave BJT-JFET technology. The first and the second ICs are fast one- and four-channel charge sensitive preamplifiers (CSP) having ENC = 1350e + 17e/pF for detector capacitances (C-d) up to 600pF at shaping time T-s 30ns, 3.5ns rise time at C-d 0pF, and about 8mW power dissipation (P-d) for 5V voltage supply. The crosstalks in the four-channel IC equals about -46dB. The third and fourth two-channel ICs containing CSP with BJT and JFET at the input followed by a signal and trigger shapers in any channel have ENC 1980e + 7e/pF (T-s = 300ns, C-d less than or equal to 600pF, P-d 67mW/chan) and ENC = 660e + 22e/pF (T-s = 400ns, C-d less than or equal to 100pF, P-d = 150mW/chan), respectively. The fifth four-channel IC consisting of pJFET-inputted CSP followed by CR - RC(3) shaper has ENC = 1500e + 15e/pF (T-s = 120ns, P-d = 35mW/chan).