CHARACTERIZATION OF ZR THIN-FILMS GROWN BY DUAL ION-BEAM SPUTTERING

Zr thin films (100-600 nm) have been deposited on pyrex substrates at different temperatures (50-200 degrees C) in a double ion beam sputtering system (residual pressure < 10(-7) torr) using Ar+ ions for both sputtering and irradiation of the growing film. The films have been characterized by XRD, resistivity measurements and optical microscopy. The results show that, depending on the flux and energy of the ions impinging the growing film, the films develop compressive and tensile stresses which clearly influence their adherence and consequently their stability against exposure to the atmosphere.