MECHANISM OF REDUCTION IN THE DISLOCATION DENSITY AS A RESULT OF ISOVALENT DOPING OF III-V SEMICONDUCTOR COMPOUNDS

A study is reported of the mechanism of a reduction in the dislocation density as a result of isovalent doping of III-V semiconductor compounds and it is shwon that dislocations can escape from isovalently doped films. An expression is obtained for the probability of escape of a dislocation outside a film and it is shown that,this escape can be achieved technologically at a low dislocation density (N(d) approximately 10(4) cm-2 in the case of a III-V film on a III-V substrate), but it is ineffective when the dislocation density is high (N(d) approximately 10(6)-10(8) cm-2, a III-V film on an Si substrate).