LOWERING OF THE BREAKDOWN VOLTAGE OF SILICON DIOXIDE BY ASPERITIES AND AT SPHERICAL ELECTRODES

被引：20
作者：
KLEIN, N
NEVANLINNA, O
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期
关键词：
D O I：
10.1016/0038-1101(83)90060-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：883 / 892
页数：10
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