X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE NI/SI OXIDE/SI INTERFACE

被引:10
作者
DILLINGHAM, TR [1 ]
CHOURASIA, AR [1 ]
CHOPRA, DR [1 ]
MARTIN, SR [1 ]
PETERSON, KL [1 ]
HU, CZ [1 ]
GNADE, B [1 ]
机构
[1] TEXAS INSTRUMENTS INC,MAT SCI LAB,DALLAS,TX 75265
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 06期
关键词
D O I
10.1116/1.574193
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:3340 / 3345
页数:6
相关论文
共 50 条
[31]   STUDY OF REACTIVE ION ETCHING OF THE SI3N4/GAAS INTERFACE IN CF4 PLASMAS BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY PHOTOELECTRON DIFFRACTION [J].
ALNOT, P ;
OLIVIER, J ;
WYCZISK, F ;
JOUBARD, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) :2361-2367
[32]   STUDY OF (SI-N-C)-PLATING STRUCTURE BY IR AND X-RAY PHOTOELECTRON-SPECTROSCOPY METHODS [J].
VARLAMOV, AG ;
GRIGOREV, YM ;
MORAVSKAYA, TM ;
SHULGA, YM .
ZHURNAL NEORGANICHESKOI KHIMII, 1991, 36 (06) :1544-1546
[33]   Study of the CdTe/As/Si(111) interface by scanning tunneling microscopy and X-ray photoelectron spectroscopy [J].
Wiame, F ;
Rujirawat, S ;
Brill, G ;
Xin, Y ;
Caudano, R ;
Sivananthan, S ;
Browning, ND ;
Sporken, R .
SURFACE SCIENCE, 2000, 454 (01) :818-822
[34]   MEASUREMENTS OF INTERFACE STATE DENSITY BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
LAU, WM ;
WU, XW .
SURFACE SCIENCE, 1991, 245 (03) :345-352
[35]   THE STOICHIOMETRY OF THE CERAMIC-TIN OXIDE INTERFACE USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
EDWARDS, MR ;
JACOBSEN, PH ;
CARLEY, A .
JOURNAL OF DENTAL RESEARCH, 1986, 65 (04) :513-513
[36]   DEPTH PROFILING OF PLASMA ANODIZED SIO2/SI INTERFACE STRUCTURES BY USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
SUDA, K ;
HATTORI, T .
SURFACE SCIENCE, 1986, 168 (1-3) :652-656
[37]   X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY-ABSORPTION NEAR-EDGE SPECTROSCOPY STUDY OF SIO2/SI(100) [J].
TAO, Y ;
LU, ZH ;
GRAHAM, MJ ;
TAY, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2500-2503
[38]   The study of the silicon oxide thickness on crystalline Si by X-ray photoelectron spectroscopy and spectroscopic ellipsometry [J].
Cotirlan, C. ;
Galca, A. C. ;
Ciobanu, C. S. ;
Logofatu, C. .
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (05) :1092-1097
[39]   Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study [J].
Kamath, A ;
Kwong, DL ;
Sun, YM ;
Blass, PM ;
Whaley, S ;
White, JM .
APPLIED PHYSICS LETTERS, 1997, 70 (01) :63-65
[40]   X-RAY PHOTOELECTRON-SPECTROSCOPY OF NICKEL MANGANESE OXIDE THERMISTORS [J].
HASHEMI, T ;
BRINKMAN, AW .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (05) :1278-1282