MICROSECOND CARRIER LIFETIMES IN SI FILMS PREPARED ON SIO2-COATED SI SUBSTRATES BY ZONE-MELTING RECRYSTALLIZATION AND BY SUBSEQUENT EPITAXIAL-GROWTH

被引：21
作者：
TSAUR, BY
FAN, JCC
GEIS, MW
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期
关键词：
D O I：
10.1063/1.93297
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：83 / 85
页数：3
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