ANALYSIS OF ELECTRICAL AND OPTICAL-PROPERTIES OF INSULATING FILM-GAAS INTERFACES USING MESFET-TYPE STRUCTURES

被引:19
作者
OZEKI, M
KODAMA, K
TAKIKAWA, M
SHIBATOMI, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词
D O I
10.1116/1.571673
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:438 / 441
页数:4
相关论文
共 6 条
[1]  
CROWELL CR, 1965, T METALL SOC AIME, V233, P478
[2]   DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].
HOUNG, YM ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3348-3352
[3]   STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J].
ITOH, T ;
YANAI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1037-1045
[4]   SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].
LEPSELTE.MP ;
SZE, SM .
BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+
[5]   ADMITTANCE OF P-N-JUNCTIONS CONTAINING TRAPS [J].
OLDHAM, WG ;
NAIK, SS .
SOLID-STATE ELECTRONICS, 1972, 15 (10) :1085-+
[6]  
ZYLBERSTEJN A, 1978, I PHYS C SER, V45, P315