RADIATION TRAPPING AND VAPOR DENSITY OF INDIUM CONFINED IN QUARTZ CELLS

被引:11
作者
BICCHI, P
MARINELLI, C
MARIOTTI, E
MEUCCI, M
MOI, L
机构
[1] Dipartimento di Fisica, Università di Siena, 53100 Siena
关键词
11;
D O I
10.1016/0030-4018(94)90321-2
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have measured, in the 700-950-degrees-C temperature range, the effective lifetime of the 6S1/2 excited level of indium vapor confined in quartz cells. The self trapping results much lower than expected suggest an effective vapor density lower than the one calculated at the thermal equilibrium. A possible explanation of this large deviation has been found in the increasing adsorption rate of indium at the cell walls. Partial fluorescence spectrum of the adsorbed atoms is reported.
引用
收藏
页码:197 / 201
页数:5
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