LUMINESCENCE ORIGINS IN MOLECULAR-BEAM EPITAXIAL SI1-XGEX

被引：77

作者：

NOEL, JP ^{[1
]}

ROWELL, NL ^{[1
]}

HOUGHTON, DC ^{[1
]}

WANG, A ^{[1
]}

PEROVIC, DD ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT MET & MAT SCI,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.107823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interstitial-type features smaller than approximately 1.5 nm and in areal densities up to 7 X 10(8) cm-2 have been identified as the origin of a broad photoluminescence (PL) band from thick, fully strained layers of Si1-xGex alloys grown by molecular beam epitaxy. The strong PL band was predominant when the alloy layer thickness was greater than 4-10 nm, depending on x and the growth temperature. Thinner alloy layers exhibited phonon-resolved transitions originating from shallow dopant bound excitons, similar to bulk material but shifted in energy due to strain and hole quantum confinement.

引用

页码：690 / 692

页数：3

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