THE APPLICATION OF SILICON MOLECULAR-BEAM EPITAXY TO VLSI

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作者：

BEAN, JC

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AIP CONFERENCE PROCEEDINGS | 1984年 / 122期

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O59 [应用物理学];

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引用

页码：198 / 204

页数：7

共 24 条

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[2] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :741-743

[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[4] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J].

BEAN, JC ;

SADOWSKI, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :137-142

[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[6]

BEAN JC, 1985, UNPUB J CRYSTAL GROW

[7]

BEAN JC, 1981, GROWTH DOPED SILICON, pCH4

[8] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J].

DEJONG, T ;

DOUMA, WAS ;

VANDERVEEN, JF ;

SARIS, FW ;

HAISMA, J .

APPLIED PHYSICS LETTERS, 1983, 42 (12) :1037-1039

[9] SEMICONDUCTOR SUPER-LATTICES - A NEW MATERIAL FOR RESEARCH AND APPLICATIONS [J].

DOHLER, GH .

PHYSICA SCRIPTA, 1981, 24 (02) :430-439

[10] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

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