ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR-DEVICE EQUATIONS

被引:6
作者
SZMOLYAN, P [1 ]
机构
[1] VIENNA TECH UNIV,INST ANGEW & NUMER MATH,A-1040 VIENNA,AUSTRIA
关键词
D O I
10.1108/eb010053
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
引用
收藏
页码:113 / 122
页数:10
相关论文
共 18 条
[1]  
BREZZI F, 1985, 7TH P INT S COMP MET
[2]  
BREZZI F, 1987, UNPUB CONVECTION DIF
[3]  
BREZZI F, IN PRESS SIAM JMA
[4]   ON EXISTENCE, UNIQUENESS AND ASYMPTOTIC-BEHAVIOR OF SOLUTIONS OF THE BASIC EQUATIONS FOR CARRIER TRANSPORT IN SEMICONDUCTORS [J].
GAJEWSKI, H .
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK, 1985, 65 (02) :101-108
[5]  
KAPILA A, 1983, ASYMPTOTIC METHODS C
[6]  
KEVORKIAN J, 1980, PERTURBATION METHODS
[7]   A SINGULARLY PERTURBED BOUNDARY-VALUE PROBLEM MODELING A SEMICONDUCTOR-DEVICE [J].
MARKOWICH, PA ;
RINGHOFER, CA .
SIAM JOURNAL ON APPLIED MATHEMATICS, 1984, 44 (02) :231-256
[9]  
MARKOWICH PA, 1986, STATIONAEY SEMICONDU
[10]  
MARKOWICH PA, IN PRESS J DIFFERENT