THE INFLUENCE OF DIFFERENT INSULATORS ON PALADIUM-GATE METAL-INSULATOR-SEMICONDUCTOR HYDROGEN SENSORS

被引：28

作者：

DOBOS, K ^{[1
]}

ARMGARTH, M ^{[1
]}

ZIMMER, G ^{[1
]}

LUNDSTROM, I ^{[1
]}

机构：

[1] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期

关键词：

D O I：

10.1109/T-ED.1984.21558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：508 / 510

页数：3

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