THE INFLUENCE OF DIFFERENT INSULATORS ON PALADIUM-GATE METAL-INSULATOR-SEMICONDUCTOR HYDROGEN SENSORS

被引：28

作者：

DOBOS, K ^{[1
]}

ARMGARTH, M ^{[1
]}

ZIMMER, G ^{[1
]}

LUNDSTROM, I ^{[1
]}

机构：

[1] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期

关键词：

D O I：

10.1109/T-ED.1984.21558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：508 / 510

页数：3

共 9 条

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[4] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].

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[5]

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[6]

NYLANDER C, 1981, 1981 P INT C INS FIL, P195

[7] MOS AND SCHOTTKY DIODE GAS SENSORS USING TRANSITION-METAL ELECTRODES [J].

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CHEN, M .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) :181-214

[8] OPTICAL AND ELECTRICAL-PROPERTIES OF THERMAL TANTALUM OXIDE-FILMS ON SILICON [J].

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[9]

SVENSON C, 1980, PHYSICS MOS INSULATO, P260

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