SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON

被引：95

作者：

OEHRLEIN, GS

DHEURLE, FM

REISMAN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3715 / 3725

页数：11

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[10] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].

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