RADIATIVE DECAY OF THE BOUND EXCITON IN DIRECT-GAP SEMICONDUCTORS - THE CORRELATION EFFECT

被引：48

作者：

SANDERS, GD ^{[1
]}

CHANG, YC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.28.5887

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5887 / 5896

页数：10

共 25 条

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