PREPARATION, STRUCTURE AND ELECTRICAL-PROPERTIES OF EPITAXIAL-FILMS OF GA2O3 ON SAPPHIRE SUBSTRATES

被引：26

作者：

CHAPLYGIN, GV ^{[1
]}

SEMILETOV, SA ^{[1
]}

机构：

[1] ACAD SCI USSR,CRYSTALLOGR INST,59 LENINSKY PROSPEKT,MOSCOW B333,USSR

来源：

THIN SOLID FILMS | 1976年 / 32卷 / 02期

关键词：

D O I：

10.1016/0040-6090(76)90322-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：321 / 324

页数：4

共 11 条

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[10]

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