3-CHANNEL BURIED-CRESCENT INGAASP LASER WITH 1.51-MU-M WAVELENGTH ON SEMI-INSULATING INP

被引:3
作者
KOREN, U
ARAI, S
TIEN, PK
机构
关键词
D O I
10.1049/el:19840118
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:177 / 178
页数:2
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[2]   LOW THRESHOLD INGAASP/INP LASERS WITH MICROCLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J].
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[3]   GROOVE GAINASP LASER ON SEMI-INSULATING INP [J].
YU, KL ;
KOREN, U ;
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YARIV, A .
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