ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACE INVERSION-LAYERS AT FINITE TEMPERATURE - THE SI(100)-SIO2 SYSTEM

被引：35
作者：
DASSARMA, S [1 ]
VINTER, B [1 ]
机构：
[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742
来源：
PHYSICAL REVIEW B | 1982年 / 26卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.26.960
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：960 / 974
页数：15
相关论文
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