CONDUCTIVITY OF MODERATELY DOPED NORMAL-TYPE GE IN STRONG MAGNETIC-FIELDS

被引：0

作者：

MATVEEV, GA ^{[1
]}

SOKOLOV, VI ^{[1
]}

TSIDILKOVSKII, IM ^{[1
]}

机构：

[1] ACAD SCI USSR,MET PHYS INST,SVERDLOVSK,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1150 / 1151

页数：2

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[9] LOCALIZED SPINS AND NEGATIVE MAGNETO-RESISTANCE IN IMPURITY CONDUCTION AT HIGH CONCENTRATIONS [J].

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[10] HALL COEFFICIENT AND RESISTIVITY IN INTERMEDIATE IMPURITY CONDUCTION OF N-TYPE GERMANIUM [J].

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