TEMPERATURE-DEPENDENCE FOR THE ONSET OF PLASTIC YIELD IN UNDOPED AND INDIUM-DOPED GAAS

被引：19

作者：

HOBGOOD, HM

MCGUIGAN, S

SPITZNAGEL, JA

THOMAS, RN

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 24期

关键词：

D O I：

10.1063/1.96844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1654 / 1655

页数：2

共 9 条

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[3]

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[4]

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BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[6] AN ANALYSIS OF DISLOCATION REDUCTION BY IMPURITY HARDENING IN THE LIQUID-ENCAPSULATED CZOCHRALSKI GROWTH OF (111) INP [J].

JORDAN, AS ;

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COCKAYNE, B ;

BRASEN, D ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4383-4389

[7] EFFECTS OF INDIUM LATTICE HARDENING UPON THE GROWTH AND STRUCTURAL-PROPERTIES OF LARGE-DIAMETER, SEMIINSULATING GAAS CRYSTALS [J].

MCGUIGAN, S ;

THOMAS, RN ;

BARRETT, DL ;

HOBGOOD, HM ;

SWANSON, BW .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1377-1379

[8] TEMPERATURE AND ORIENTATION DEPENDENCE OF PLASTIC-DEFORMATION IN GAAS SINGLE-CRYSTALS DOPED WITH SI, CR, OR ZN [J].

SWAMINATHAN, V ;

COPLEY, SM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (11-1) :482-485

[9]

[No title captured]

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