CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

被引：31

作者：

JOYCE, TB ^{[1
]}

BULLOUGH, TJ ^{[1
]}

KIGHTLEY, P ^{[1
]}

KIELY, CJ ^{[1
]}

XING, YR ^{[1
]}

GOODHEW, PJ ^{[1
]}

机构：

[1] INST SEMICOND,BEIJING,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90392-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.

引用

页码：206 / 211

页数：6

共 8 条

[1] EFFECT OF SOURCE CHEMISTRY AND GROWTH-PARAMETERS ON ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
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