DYNAMIC OBSERVATIONS OF INTERFACE PROPAGATION DURING SILICON OXIDATION

被引：112

作者：

ROSS, FM

GIBSON, JM

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.68.1782

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed in real time the nature and motion of the silicon(111)/oxide interface during oxidation in situ in a transmission electron microscope. Oxidation occurs by the reaction of discrete monolayers with no flow of surface steps. This is in dramatic contrast to oxygen etching of silicon at high temperatures, which is initially also a terrace reaction but is followed by an evaporative process from steps.

引用

页码：1782 / 1785

页数：4

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