STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS

被引：101

作者：

DAWSON, P ^{[1
]}

WILSON, BA ^{[1
]}

TU, CW ^{[1
]}

MILLER, RC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 08期

关键词：

BAND STRUCTURE - OPTICAL PROPERTIES - PHOTOLUMINESCENCE - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1063/1.96500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence spectra from Al//0//. //3//7Ga//0//. //6//3As/AlAs multiple quantum well structures with staggered band alignments are presented which provide the first direct optical measure of the valence-band offset at a semiconductor heterojunction. The experiment takes advantage of the crossover occurring at a critical aluminum concentration above which the indirect X minima in the AlAs become the lowest energy conduction bands in the system, and recombination occurs across the interface. The resulting emission fixes the valence-band offset at DELTA E//v equals 342 plus or minus 4 meV for this structure.

引用

页码：541 / 543

页数：3

共 27 条

[1] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J].