SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE

被引：7

作者：

CHENG, CL ^{[1
]}

LIAO, ASH ^{[1
]}

CHANG, TY ^{[1
]}

CARIDI, EA ^{[1
]}

COLDREN, LA ^{[1
]}

LALEVIC, B ^{[1
]}

机构：

[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期

关键词：

D O I：

10.1109/EDL.1984.26008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / 514

页数：4

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