SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE

被引：7
作者：
CHENG, CL [1 ]
LIAO, ASH [1 ]
CHANG, TY [1 ]
CARIDI, EA [1 ]
COLDREN, LA [1 ]
LALEVIC, B [1 ]
机构：
[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期
关键词：
D O I：
10.1109/EDL.1984.26008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：511 / 514
页数：4
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